Nanostructure NiO films prepared by PLD and their optoelectronic properties
Doaa S. Jbaier ,Dr.Jehan A. Simon , Dr. Khawla S. Khashan
Abstract

NiO thin films have compounded by pulsed laser deposition on glass and silicon (111) substrates, employing Q-switching Nd:YAG laser. Structure, grain size and optical properties have analyzed by using FTIR, AFM and UV-VIS spectroscopy. FTIR spectra conformed of NiO bonding. AFM images show the particle size about ~66nm. The optical transmission results premiered the transparency of the NiO films is greater than 70% in the visible region with optical band gap 3.85eV. The current voltage characterization of NiO/Si heterojunction has good rectifying.
Keywords : NiO thin film, photodetector, Characterization of NiO