In the present work, three different active layer thicknesses of Bi2O3 filmswas employ for fabricated n-Bi2O3/p-Si heterojunction detector, using reactive pulse laser deposition technique as preparation method, detector parameter was carried out,responsivity, detectivity quantum efficiency and rise time in order to investigated the performance of the fabricated devise .
Key word: Reactive Pulse Laser Deposition, Bismuth Oxide, Heterojunction, Responsivity, Rise Time, Active Layer Thicknesses.