Typical of Morphological Properties of Porous Silicon
Dr. Uday M. Nayef , Mohammed WaleedMuayad
Abstract

Porous silicon (PS) layers are prepared by anodization for etching time densities. In this paper we prepared porous silicon layers from p-type silicon by electrochemical etching method. And study the morphology properties of PSsamples by changing etching time and imaged PS samplein Atomic force microscopy(AFM) . We found that fromAFM images show the PS layer has sponge likestructure, and average diameter of pore and thickness ofPS layer decreasing with silicon <111> oriented morethan with silicon <100>. And also we found that whenincreasing etching of time porosity of PS increasingspecifically in <100>.
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