PERFORMANCE OF A NANOSTRUCTURED PbS/Si HETROJUNCTION DETECTOR DEPOSITED BY CBD
ALI M. MOUSA , SELMA M. Hussin , SUAD M. KADHIM
Abstract

The present work demonstrates the electrical transport and photo response properties of nano PbS / n-Si hetero junction grown by chemical bath deposition. Polycrystalline nature of nanostructured PbS is confirmed by the X-ray diffraction. XRD measurements show that these nano films have sharp peaks at 2θ=30o indicating a preferred orientation along (200) plane, with grain size increase with deposition time. The electrical transport properties of the device were studied at room temperature. The diode shows good ideality factor and rectifying behavior with an on/off ratio change with deposition time. Experimental data showed that the responsivity cutoff point corresponds to the absorption edge of the siliconsubstrate, and films photosensitivity depends on the film thickness.
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